Solar photovoltaic (PV) system is instrumental in provision of sustainable energy in the wake of social and environmental concerns. While research in solar cell efficiency has made great strides and achieved over 40%, key concern is however, reasonably extending the time constant of the solar cell lifetime in minimum or no insolation. This emanates from the fact that most of the solar cells have solid power storage which runs out under limited insolation and hence reducing the reliability of the cells. Therefore, innovation in PV is likely to rely not only on high efficiency PV with flexible and lightweight thin films, but also on reliability of the PV which can be guaranteed by ensuring the longest output time of the PV in limited insolation. This paper investigated the effect of an infra-red generating element on the time constant of a solar cell lifetime when the element is placed adjacent to the solar cell. Using a dye-sensitized solar cell (DSSC) using TiO2 electrode, maintaining the topology, thermal escape mechanism, quantum structure and optical absorption of In(Ga)As quantum dots in a wide gap Al0.2GaAs host material, the study investigated the effect of an IR emitting element on the solar harvesting device lifetime. The study shows that there was a minimum of 27% increase in power output under low irradiation while 14% increase in power output was recorded for high irradiation when an IR diode is mounted adjacent to solar cell. We conclude standardized IR element adjacent to a solar cell in a PV system can significantly stretch a solar cell lifetime and power output.