This paper reports the results of electrical characterization of TiO2/Nb2O5 composite thin films. Uniform TiO2 and Nb2O5 composites thin films were deposited on FTO coated glass substrate using electrophoretic deposition (EPD) technique. The EPD voltage of 35V (DC) and deposition time of 90s, were used for various volume fractions of Nb2O5 in composites. Uniform and crack free composite films were successfully deposited using the EPD technique as shown by the SEM micrographs. The Hall Effect equipment was used to characterize the films through measurement of current and the Hall voltage. Current against Hall voltage plot for films of various volume fractions of Nb2O5 were used to determine Hall coefficients and majority charge carrier density. The sign of Hall coefficient values revealed that TiO2/Nb2O5 composite thin films had a net n-type polarity indicating electrons were the majority charge carrier in the composite films. The results showed that dye-sensitized solar cells should be fabricated with TiO2/Nb2O5 composites thin films in ratio of 1:1 because such ratio 1:1 for TiO2 and Nb2O5 in composite yielded the highest electron mobility in the films.